high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 1 ? ? ? ? ? WFP10N60 ? 600v n-channel mosfet features low intrinsic capacitances ? excellent switching characteristics ? to \ 220 ?? g \ gate,d \ drain,s \ sourse ? extended safe operating area ? unrivalled gate charge :qg= 33nc (typ.) bvdss=600v,id=10a r ds(on) :0.73 ? (max) @vg=10v ? 100% avalanche tested absolute maximum ratings tc=25 unless other wise noted symbol parameter WFP10N60 units v dss drain-sourse voltage 600 v i d drain current -continuous (tc=25 ) 10 a -continuous (tc=100 ) 3.4 a v gs gate-sourse voltage 30 v e as single plused avanche energy (note1) 520 mj i ar avalanche current (note2) 10 a p d power dissipation (tc=25 ) 156 w t j ,t stg operating and storage temperature range -55 ~ +150 tl maximum lead temperature for soldering purpose,1/8? from case for 5 seconds 300 thermal characteristics ? symbol parameter typ. max units r jc thermal resistance,junction to case -- 0.8 /w r cs thermal resistance,case to sink 0.5 -- /w r ja thermal resistance,junc tion to ambient -- 62.5 /w ? g s d ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? ! ! ! ! ! ! ! ! ! ! ! ! ? ? ? ? s d g www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 2 ? ? electrical characteristics tc = 2 5 unless other wise noted ? symbol parameter test condition min. typ. max units off characteristics bv dss drain-sourse breakdown voltage id=250 a vgs=0 600 -- -- v bv dss / t j breakdown voltage temperature conficient i d =250 a,reference to 25 -- 0.7 -- v/ idss zero gate voltage drain current vds=600v, vgs=0v -- -- 1 a vds=480v, tc=125 10 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- 100 na ? igssr gate-body leakage current, reverse vgs=-30v, vds=0v -- -- -100 na ? on characteristics ? v gs(th) date threshold voltage id=250ua,vds=vgs 2 -- 4 v r ds(on) static drain-sourse on-resistance id=5a,vgs=10v -- -- 0.73 ? dynamic characteristics ciss input capacitance vds=25v vgs=0 f=1.0mhz -- 1570 2040 pf coss output capacitance -- 166 215 pf crss reverse transfer capacitance -- 18 24 pf switching characteristics ? td(on) turn-on delay time vdd=300v id=10a rg=25 (note 3,4) -- 23 55 ns tr turn-on rise time -- 66 150 ns td(off) turn-off delay time -- 144 300 ns tf turn-off fall time -- 77 165 ns qg total gate charge vds=480,vgs=10v id=10a (note 3,4) -- 44 57 nc qgs gate-sourse charge -- 6.7 -- nc qgd gate-drain charge 18.5 -- nc drain-sourse diode characteristics and maximum ratings i s maximun continuous drain-sourse diode forward current -- -- 10 a i sm maximun plused drain-sourse diodeforwad current -- -- a v sd drain-sourse diode forward voltage id=10a -- -- 1.4 v trr reverse recovery time i s =10a,v gs =0v di f /dt=100a/ s (note3) -- 340 -- ns qrr reverse recovery charge -- 3.2 -- c *notes ? 1, l=10.6mh, ias=9.5a, vdd=50v, rg=25 ? , starting tj =25c ? 2, repetitive rating : pulse width lim ited by maximum junction temperature 3, pulse test : pulse width 300 s, duty cycle 2% 4, essentially independent of operating temperature ? www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 3 ? ? typical characteristics 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 25 30 35 0.0 0.5 1.0 1.5 2.0 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ], drain-source on-resistance i d , drain current [a] figure 5. capacitance characteristics figure 6. gate charge characteristics figure 2. transfer characteristics figure 1. on-region characteristics 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0 1020304050 0 2 4 6 8 10 12 v ds = 300v v ds = 120v v ds = 480v note : i d = 9.5a v gs , gate-source voltage [v] q g , total gate charge [nc] figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 4 ? ? typical characteristics (continued) 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100 ms 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 9-1. maximum safe operating area for WFP10N60 figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 4.75 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1 . z jc (t) = 0.8 /w m ax. 2 . d uty f a ctor, d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) sin g le p u lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), t herm al r esponse t 1 , s quare w ave p ulse d uration [sec] figure 11-1. transient thermal response curve for WFP10N60 t 1 p dm t 2 www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 5 ? ? gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 6 ? ? peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs dv/dt controlled by r g i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- www.wisdom-technologies.com
|
